Abstract
Both electrical conductivity and Seebeck coefficient of sputtered Bi-Sb-Te films were enhanced by introducing a high density of electric current through the films during thermal annealing. The electrically stressed Bi-Sb-Te films were found to have lower carrier concentration but much higher mobility than the films thermally treated at the same temperatures. A mechanism based on electromigration-induced preferential Sb diffusion is proposed to explain the observed electrical transport properties and precipitation of Sb-rich phase in the electrically stressed Bi-Sb-Te films. The study shall lead to an effective strategy of improving thermoelectric properties of Bi-Sb-Te films by electric current stressing. © 2008 American Institute of Physics.
Cite
CITATION STYLE
Liao, C. N., Liou, K. M., & Chu, H. S. (2008). Enhancement of thermoelectric properties of sputtered Bi-Sb-Te thin films by electric current stressing. Applied Physics Letters, 93(4). https://doi.org/10.1063/1.2965487
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