Abstract
The realization of midinfrared GaInSbAlGaInSb type I quantum well diode lasers grown on GaAs is reported. Lasing was observed up to 95 K, at an emission wavelength of ∼3.5 μm, threshold current density of 115 A cm2, and with a characteristic temperature T0 ∼51 K. © 2007 American Institute of Physics.
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APA
Nash, G. R., Smith, S. J., Coomber, S. D., Przeslak, S., Andreev, A., Carrington, P., … Ashley, T. (2007). Midinfrared GaInSbAlGaInSb quantum well laser diodes grown on GaAs. Applied Physics Letters, 91(13). https://doi.org/10.1063/1.2793821
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