A new active pixel structure with a pinned photodiode for wide dynamic range image sensors

Abstract

A wide dynamic range CMOS image sensor based on a new active pixel structure with a pinned photodiode is proposed and evaluated with device simulations. The proposed pixel device has a linear and a logarithmic characteristics in low and high illumination region, respectively. The technique of direct detection of photodiode potential leads to a wide logarithmic response compared with the con-ventional linear-log wide DR image sensor with pinned photo diode. © 2005, The Institute of Electronics, Information and Communication Engineers. All rights reserved.