Abstract
Fabricating complex transition metal oxides with a tunable bandgap without compromising their intriguing physical properties is a longstanding challenge. Here we examine the layered ferroelectric bismuth titanate and demonstrate that, by site-specific substitution with the Mott insulator lanthanum cobaltite, its bandgap can be narrowed by as much as 1 eV, while remaining strongly ferroelectric. We find that when a specific site in the host material is preferentially substituted, a split-off state responsible for the bandgap reduction is created just below the conduction band of bismuth titanate. This provides a route for controlling the bandgap in complex oxides for use in emerging oxide optoelectronic and energy applications. © 2012 Macmillan Publishers Limited. All rights reserved.
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CITATION STYLE
Choi, W. S., Chisholm, M. F., Singh, D. J., Choi, T., Jellison, G. E., & Lee, H. N. (2012). Wide bandgap tunability in complex transition metal oxides by site-specific substitution. Nature Communications, 3. https://doi.org/10.1038/ncomms1690
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