Amorphous silicon based nipiin structure for color detection

Abstract

Hydrogenated amorphous silicon based nipiin three color detectors with a bias voltage controlled spectral response have been fabricated. These band-gap and mobility-lifetime product engineered structures employed as two terminal devices exhibit a dynamic range above 95 dB. The maximum of the spectral response shifts by variation of the applied voltage. Three linearly independent spectral response curves can be extracted to generate a red-green-blue signal. Conventional spatial color separation with optical filters is transferred into a voltage multiplexed read out sequence. Bias voltage switching under different monochromatic illumination and illumination switching-on transients for different bias voltages are carried out to investigate the time dependent behavior of the photocurrent. Based on these results optimization criteria to accelerate the transient behavior and to determine the maximum frame rate for color detection are presented. © 1998 American Institute of Physics.