Fabrication and electric characterization of the n-ZnO/ p-nanocrystalline diamond film heterojunction

Abstract

A heterojunction of n-ZnO / p-nanocrystalline diamond (NCD) film was fabricated, where the undoped p-type NCD film and n-type ZnO film were grown by microwave plasma chemical vapor deposition (MPCVD) method and radio-frequency (RF) reactive magnetron sputtering method, respectively. The structure and morphology of the NCD film and ZnO film were analyzed by Raman spectroscopy, X-ray diffraction (XRD) and atomic force microscopy (AFM). The carrier sheet densities of p-type NCD film and n-type ZnO film measured by Hall Effect method were 1.3×1012 cm-2 and 8.9×1014 cm-2, respectively. I-V characterization of the n-ZnO / p-NCD heterojunction indicated that this structure was rectifying in nature with a turn-on voltage of about 0.6V. © 2009 IOP Publishing Ltd.