Threshold voltage uniformity enhancement for low-temperature polysilicon thin-film transistors using tilt alignment technique

Abstract

A technique for improvement of threshold voltage uniformity based on the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) technology was proposed and demonstrated. The tilt alignment technique is applied to LTPS substrate crystallized by sequential lateral solidification laser annealing process to control the number of grain boundaries within a channel. The experimental results show that the tilt alignment scheme can significantly improve the threshold voltage and mobility uniformity of poly-Si TFTs. This technique enables LTPS-TFT technology to be more suitable for active matrix organic light-emitting diode applications where the display of uniform brightness is critical. © 2006 The Electrochemical Society.