Abstract
Rare-earth element erbium implanted into silicon was studied by photoluminescence and Rutherford backscattering analysis. Two sets of luminescent bands related to the weakly crystal field split spin-orbit levels 4I13/2→ 4I15/2 of Er 3+ (4f 11) at different lattice sites having different symmetries were observed.
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CITATION STYLE
APA
Tang, Y. S., Heasman, K. C., Gillin, W. P., & Sealy, B. J. (1989). Characteristics of rare-earth element erbium implanted in silicon. Applied Physics Letters, 55(5), 432–433. https://doi.org/10.1063/1.101888
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