Abstract
The development of high quality II-VI compounds is dependent on advances made in certain key research activities. This review is concerned with these activities which includes precursors such as iPr2Te, tBu2Te, Me(allylTe and (allyl)2Te for low temperature growth, substrates including CdZnTe, CdTe, CdTeSe, GaAs on Si for epitaxy, doping for p-n junction formation and photo-assisted growth processes for low temperature growth, photo-patterning and selected area deposition. © 1989.
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CITATION STYLE
Mullin, J. B., Cole-Hamilton, D. J., Irvine, S. J. C., Hails, J. E., Giess, J., & Gough, J. S. (1990). MOVPE of narrow and wide gap II-VI compounds. Journal of Crystal Growth, 101(1–4), 1–13. https://doi.org/10.1016/0022-0248(90)90929-F
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