Abstract
Molecular beam epitaxy growth of InAs/InGaAs QD structures on GaAs substrates as well as fabrication and performance of long-wavelength QD edge-emitting lasers and VCSELs are discussed. 1.3 μm QD VCSELs were successfully fabricated from the structures with several QD planes inserted into the optical microcavity with AlO-GaAs and AlGaAs-GaAs Bragg reflectors. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Cite
CITATION STYLE
Ustinov, V. M., Maleev, N. A., Kovsh, A. R., & Zhukov, A. E. (2005). Quantum dot VCSELs. In Physica Status Solidi (A) Applications and Materials Science (Vol. 202, pp. 396–402). https://doi.org/10.1002/pssa.200460325
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.