Analytical drain current model reproducing advanced transport models in nanoscale cylindrical surrounding-gate (SRG) MOSFETs

Abstract

In this paper we extend a compact surrounding-gate MOSFET model to include the hydrodynamic transport and quantum mechanical effects, and we show that it can reproduce the results of 3D numerical simulations using advanced transport models. A template device representative for the cylindrical surrounding-gate MOSFET was used to validate the model. The final compact model includes mobility degradation, drain-induced barrier lowering, velocity overshoot, and quantum effects. Comparison between the compact model and the advanced transport modeling approaches shows good agreement within the practical range of drain voltages. © 2011 American Institute of Physics.