Experimental demonstration on the ultra-low source/drain resistance by metal-insulator-semiconductor contact structure in In0.53Ga 0.47As field-effect transistors

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Abstract

In this work, we demonstrate the ultra-low contact resistivity of 6.7 × 10-9 Ω/cm2 by inserting 0.6-nm-ZnO between Al and InGaAs(Si: 1.5 × 1019 cm-3). The metal-insulator-semiconductor tunneling diode with 0.6-nm-ZnO exhibits nearly zero (0.03 eV) barrier height. We apply this contact structure on the source/drain of implant-free In0.53Ga0.47As quantum-well metal-oxide-semiconductor field- effect transistors. The excellent on-state performance such as saturation drain current of 3 × 10-4 A/μm and peak transconductance of 1250 μS/μm is obtained which is attributed to the ultra-low source/drain resistance of 190 Ω-μm. © 2013 © 2013 Author(s).

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Liao, M. H., & Chen, P. K. (2013). Experimental demonstration on the ultra-low source/drain resistance by metal-insulator-semiconductor contact structure in In0.53Ga 0.47As field-effect transistors. AIP Advances, 3(9). https://doi.org/10.1063/1.4821803

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