Nanostructure NiO films prepared by PLD and their optoelectronic properties

Abstract

NiO thin films have compounded by pulsed laser deposition on glass and silicon (111) substrates, employing Q-switching Nd:YAG laser. Structure, grain size and optical properties have analyzed by using FTIR, AFM and UV-VIS spectroscopy. FTIR spectra conformed of NiO bonding. AFM images show the particle size about ~66nm. The optical transmission results premiered the transparency of the NiO films is greater than 70% in the visible region with optical band gap 3.85eV. The current voltage characterization of NiO/Si heterojunction has good rectifying. ‫وﺧﺼﺎﺋﺼﮭﺎ‬ ‫اﻟﻨﺒﻀﻲ‬ ‫ﺑﺎﻟﻠﯿﺰر‬ ‫اﻟﺘﺮﺳﯿﺐ‬ ‫ﺑﻄﺮﯾﻘﺔ‬ ‫اﻟﻤﺤﻀﺮة‬ ‫اﻟﻨﺎﻧﻮﯾﺔ‬ ‫اﻟﻨﯿﻜﻞ‬ ‫اوﻛﺴﯿﺪ‬ ‫اﻏﺸﯿﺔ‬ ‫اﻟﻜﮭﺮوﺑﺼﺮﯾﺔ‬ ‫اﻟﺨﻼﺻﺔ‬ ‫ﻣﻦ‬ ‫ﻗﻮاﻋﺪ‬ ‫ﻋﻠﻰ‬ ‫اﻟﻨﺒﻀﻲ‬ ‫ﺑﺎﻟﻠﯿﺰر‬ ‫اﻟﺘﺮﺳﯿﺐ‬ ‫ﺑﻮاﺳﻄﺔ‬ ‫ﺗﺤﻀﯿﺮھﺎ‬ ‫ﺗﻢ‬ ‫اﻟﺮﻗﯿﻘﺔ‬ ‫اﻟﻨﯿﻜﻞ‬ ‫اوﻛﺴﯿﺪ‬ ‫اﻏﺸﯿﺔ‬) ‫اﻻﺗﺠﺎھﯿﺔ‬ ‫ذي‬ ‫واﻟﺴﯿﻠﯿﻜﻮن‬ ‫اﻟﺰﺟﺎج‬ 111 ‫ﻟﯿﺰر‬ ‫ﺑﺎﺳﺘﺨﺪام‬ ،(،‫اﻟﺘﺮﻛﯿﺐ‬ .‫اﻟﻨﻮﻋﯿﺔ‬ ‫ﻋﺎﻣﻞ‬ ‫ﺑﺘﻘﻨﯿﺔ‬ ‫ﯾﺎك‬ ‫اﻟﻨﺪﯾﻤﯿﻮم‬ ‫ﺗﺤﺖ‬ ‫ﻟﻼﺷﻌﺔ‬ ‫ﻓﻮرﯾﺮ‬ ‫ﺗﺤﻠﯿﻼت‬ ‫ﺑﺎﺳﺘﺨﺪام‬ ‫ﺗﺤﻠﯿﻠﮭﺎ‬ ‫ﺗﻢ‬ ‫اﻟﺒﺼﺮﯾﺔ‬ ‫واﻟﺨﺼﺎﺋﺺ‬ ‫اﻟﺤﺒﯿﺒﻲ‬ ‫اﻟﺤﺠﻢ‬)‫اﻟﺤﻤﺮاء‬ FTIR ‫ﻧﺘﺎﺋﺞ‬ ‫اظﮭﺮت‬ .‫اﻟﺒﻨﻔﺴﺠﯿﺔ‬ ‫وﻓﻮق‬ ‫اﻟﻤﺮﺋﯿﺔ‬ ‫ﻟﻼﺷﻌﺔ‬ ‫اﻟﻄﯿﻔﻲ‬ ‫واﻟﺘﺤﻠﯿﻞ‬ ‫اﻟﺬرﯾﺔ‬ ‫اﻟﻘﻮة‬ ‫ﻣﺠﮭﺮ‬ ،() ‫طﯿﻒ‬ FTIR ‫ﺻﻮ‬ ‫وﺑﯿﻨﺖ‬ ‫اﻟﻨﯿﻜﻞ‬ ‫اوﻛﺴﯿﺪ‬ ‫اﺻﺮة‬ ‫وﺟﻮد‬ (‫ﺣﻮاﻟﻲ‬ ‫اﻟﺤﺒﯿﺒﻲ‬ ‫اﻟﺤﺠﻢ‬ ‫ان‬ ‫اﻟﺬرﯾﺔ‬ ‫اﻟﻘﻮة‬ ‫رﻣﺠﮭﺮ‬ 66 ‫ﻣﻦ‬ ‫اﻛﺒﺮ‬ ‫ﻋﺎﻟﯿﺔ‬ ‫ﻧﻔﺎذﯾﺔ‬ ‫اﻻﻏﺸﯿﺔ‬ ‫واظﮭﺮت‬ .‫ﻧﺎﻧﻮﻣﺘﺮ‬ 70 ‫طﺎﻗﺔ‬ ‫وﺑﻔﺠﻮة‬ ‫اﻟﻤﺮﺋﯿﺔ‬ ‫ﻟﻠﻤﻨﻄﻘﺔ‬ % 3.85 ‫ﺗﯿﺎر‬ ‫ﺧﺼﺎﺋﺺ‬ .‫ﻓﻮﻟﺖ‬ ‫اﻟﻜﺘﺮون‬-‫ﻟﻠﺜﻨﺎﺋﻲ‬ ‫ﺟﮭﺪ‬ NiO/Si .‫ﺟﯿﺪ‬ ‫ﺗﻘﻮﯾﻢ‬ ‫ﺗﻤﺘﻠﻚ‬