A novel topological insulator with orthorhombic crystal structure is demonstrated. It is characterized by quasi one-dimensional, conducting atomic chains instead of the layered, two-dimensional sheets known from the established Bi2(Se,Te)3 system. The Sb-doped Bi2Se3 nanowires are grown in a TiO2-catalyzed process by chemical vapor deposition. The binary Bi2Se3 is transformed from rhombohedral to orthorhombic by substituting Sb on ∼38% of the Bi sites. Pure Sb2Se3 is a topologically trivial band insulator with an orthorhombic crystal structure at ambient conditions, and it is known to transform into a topological insulator at high pressure. Angle-resolved photoemission spectroscopy shows a topological surface state, while Sb doping also tunes the Fermi level to reside in the bandgap.
CITATION STYLE
Schönherr, P., Zhang, S., Liu, Y., Kusch, P., Reich, S., Giles, T., … Hesjedal, T. (2015). A new topological insulator built from quasi one-dimensional atomic ribbons. Physica Status Solidi - Rapid Research Letters, 9(2), 130–135. https://doi.org/10.1002/pssr.201409518
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