Low leakage current fluorinated LPD-SiO2/MOCVD-TiO2 films

Abstract

The characteristics of fluorinated silicon oxide/titanium oxide thin films grown on silicon substrate were studied. The titanium oxide films were prepared by metallorganic chemical vapor deposition, and fluorinated silicon oxide films were prepared by liquid phase deposition. Compared with titanium oxide/silicon, the leakage current is much improved due to the high bandgap of liquid phase deposited silicon oxide and the fluorine passivation of the grain boundary of polycrystalline titanium oxide films. The dielectric constant can reach 77 and the leakage current can reach 6 × 10-8 A/cm2 under the electric field of 0.5 MV/cm. © 2004 The Electrochemical Society.