Evaluation of the Long-Term Reliability of Open-Tube Diffused Planar InGaAs/InP Avalanche Photodiodes under a Hybrid of Thermal and Electrical Stresses

Abstract

The long-term reliability of open-tube diffused planar InGaAs/InP APDs was investigated via accelerated life testing in this study. For the proposed life testing scheme, both thermal and electrical stresses were applied simultaneously to reduce the testing periods while maintaining statistical significance. Additionally, the Eyring model was used to extrapolate the activation energy. To determine the optimum life testing conditions, high-temperature storage tests, preliminary accelerated life tests, and main accelerated life tests were conducted. From the test results, the mean-time-to-failure was utilized to verify the suitability of the Eyring model. The proposed testing scheme, which utilizes a hybrid of accelerated stress factors, allows us to estimate the device reliability within an acceptable testing period, minimizing the time to market.