Abstract
We show that the growth of the heterostructure LaGaO3/SrTiO 3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their crystal perfection and to evaluate the abruptness of the interface. Their carrier density and sheet resistance are compared to the case of LaAlO3/SrTiO3 and a superconducting transition is found. The results open the route to widening the field of polar-nonpolar interfaces, pose some phenomenological constrains to their underlying physics and highlight the chance of tailoring their properties for future applications by adopting suitable polar materials. © 2010 American Institute of Physics.
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CITATION STYLE
Perna, P., MacCariello, D., Radovic, M., Scotti Di Uccio, U., Pallecchi, I., Codda, M., … Granozio, F. M. (2010). Conducting interfaces between band insulating oxides: The LaGaO 3/SrTiO3 heterostructure. Applied Physics Letters, 97(15). https://doi.org/10.1063/1.3496440
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