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Effects of well thickness on the spectral properties of In0.5 Ga0.5 AsGaAs Al0.2 Ga0.8 As quantum dots-in-a-well infrared photodetectors

Applied Physics Letters (2008) 92(19)
DOI: 10.1063/1.2927487
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Abstract

We report on the effects of the quantum well (QW) thickness on the spectral response and other characteristics of In0.5 Ga0.5 AsGaAs Al0.2 Ga0.8 As quantum dots-in-a-well infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition. The main device properties are observed to have a strong dependence on the QW parameters. © 2008 American Institute of Physics.

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APA

Jolley, G., Fu, L., Tan, H. H., & Jagadish, C. (2008). Effects of well thickness on the spectral properties of In0.5 Ga0.5 AsGaAs Al0.2 Ga0.8 As quantum dots-in-a-well infrared photodetectors. Applied Physics Letters, 92(19). https://doi.org/10.1063/1.2927487

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