Multi trigger resist for EUV lithography

Abstract

Irresistible Materials (IM) is developing novel resist systems based on the multi-trigger concept, which incorporates a dose dependent quenching-like behaviour. The multi trigger resist (MTR) is a negative tone crosslinking resist that does not need a post exposure bake (PEB), In this study, we present the results that have been obtained using MTR resists by performing EUV exposures on the ASML NXE3300B EUV scanner at IMEC, and also at PSI and the MET tool at Berkeley. We present the lithography performance of the MTR2 resist series, which has been designed for lower line edge roughness. The MTR2 resist shows 16nm half pitch lines patterned with a dose of 38mJ/cm2, giving a LER of 3.7 nm on the NXE3300. Performance across various process conditions is discussed. We also present a new resist formulation using a crosslinker with a high opacity non-metallic atom attached, which has patterned 13nm lines at PSI and MET.