CdS versus ZnSnO buffer layers for a CIGS solar cell: a depth-resolved analysis using the muon probe

Abstract

The influence of a buffer layer in the surface of a Cu(In,Ga)Se 2 (CIGS) solar cell material is studied using implanted positive muons as a probe. A depth resolved analysis of the muon data suggests that both CdS and ZnSnO reduce the width of a defect layer present at the CIGS surface to about half its original value. Additionaly, CdS is able to reduce the intensity of the distur¬bance in the defected region, possibly due to a surface reconstrution in CIGS.