Angle-resolved polarized Raman spectra of the basal and edge plane of MoS 2

Abstract

Angle-resolved polarized (ARP) Raman spectroscopy can be utilized to characterize the Raman modes of two-dimensional layered materials based on crystal symmetry or crystal orientation. In this paper, the polarization properties of E 1 2 g and A 1 g modes on the basal plane and edge plane of high purity 2H-MoS 2 bulk crystal grown by chemical vapor transport (CVT) method were investigated by ARP Raman spectroscopy. The I and II type ARP Raman spectroscopy with four kinds of polarization configurations: αY, αX, βY, and βX were used to explore the intensity dependence of E 1 2 g and A 1 g modes at different planes on the polarization direction of incident/scattered light. The results show that the E 1 2 g and A 1 g modes exhibit different polarization properties dependent on the polarization of the incident laser and the in-plane rotation of the sample at different planes. The experimental results were confirmed and analyzed through theoretical calculation. Our work sheds light on the intriguing effect of the subtle atomic structure in stacked MoS 2 layers on the resulting ARP Raman properties. This provides a reference for the study of other two-dimensional layered crystalline materials by ARP Raman spectroscopy.