Narrowing bandgap and enhanced mechanical and optoelectronic properties of perovskite halides: Effects of metal doping

Abstract

Perovskite halides are the most promising current candidates for the construction of solar cells and other photovoltaic devices. This is the first theoretical approach to explore the effects of Mn-doping on the optoelectronic performance of the lead-free halide CsGeBr3 and the lead-bearing halide CsPbBr3. We have performed the first-principles calculations to investigate the structural, mechanical, electronic, and optical properties of pure and Mn-doped CsGeBr3 and CsPbBr3 perovskite halides in detail. The lattice constants of Mn-doped halides were slightly reduced compared to their pure phases, which is common in materials after doping. The structural stability of both undoped and doped halides was confirmed by their formation enthalpy. Analysis of the mechanical properties revealed the mechanical stability of both undoped and Mn-doped CsGeBr3 and CsPbBr3. The lower values of the bulk modulus suggested potential optoelectronic applications for the halides being studied. Remarkably, the partial substitution of Ge with Mn narrows the bandgap of both Pb-free and Pb halides, enhancing the electron transfer from the valence band to the conduction band, which increased the absorption and conductivity, essential for superior optoelectronic device applications. The combined analysis of mechanical, electronic, and optical properties indicated that the Mn-doped halides, CsGeBr3 and CsPbBr3, are more suitable for the solar cells and optoelectronic applications than undoped CsGeBr3 and CsPbBr3.