Synthesis of copper oxide thin films by electrolysis method based on Porous Silicon for Solar Cell Applications

Abstract

Copper oxide thin film was successfully prepared by electrolysis method and deposited on glass and porous silicon substrates. The main goal of this paper is to study the properties of copper oxide thin films and prepare a solar cell of low cost and good efficiency. These properties were optimized at annealing temperature (200) °C. The transmission spectrum were studied for the prepared thin film showed good transparency in the visible region. The structure of films was characterized by X-ray diffraction. The average grain size of the thin film from AFM analysis is about 46.3 nm. The energy bandgap is found to be (3.8) eV this wide bandgap is due to the quantum size effect. The solar cell efficiency is found to be (12.9%).