Optimization of YIG/Bi stacks for spin-to-charge conversion and influence of aging

Abstract

We show that an optimized growth of magnetic layer/non-magnetic layer stacks allows for the improvement of the spin-to-charge conversion efficiency. From the analysis of the voltage signal generated in spin pumping experiments due to the inverse spin Hall effect (ISHE) on Y3Fe5O12 (YIG)/Bi stacks, we have determined values for the spin Hall angle and the spin-diffusion length in Bi of 0.0068(8) and 17.8(9) nm, respectively. Based on these results, we have also studied the influence of aging on the spin-to-charge conversion efficiency by performing spin pumping experiments on YIG/Bi stacks after exposing the samples to ambient conditions for several days and up to 150 days. We have found that in YIG/Bi samples with Bi thicknesses around or below the spin-diffusion length, the ISHE voltage signal is still above 80% of its initial value after 100 days.