Some results on the germanium telluride density of states

Abstract

Germanium telluride (GeTe) is one of the most studied phase change materials. Surprisingly, only little is known about the distribution of states (DOS) in its band gap. In this paper we investigate both experimentally and theoretically the amorphous GeTe DOS and we propose a model for this DOS as well as orders of magnitude of some of the transport parameters of this material. The DOS we propose is subsequently compared to those suggested to explain the threshold switching and the resistance drift phenomena.