Titanium atom densities in reactive rf magnetron sputtering for TiO2 deposition

  • Nakamura T
  • Okimura K
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Abstract

Titanium (Ti) atom densities on the radial and axial directions in Ar–O2 reactive rf (13.56 MHz) magnetron sputtering were investigated by an atomic absorption method for the conditions where crystalline TiO2 films grow. Ti atom densities in pure Ar discharge were also measured for comparison with those in the Ar–O2 mixture discharge. At a total pressure of 3.5 Pa and rf power of 200 W, the Ti atom densities in the Ar–O2 discharge were (0.2–3.1)×109 cm−3, two orders smaller than those [(0.2–2.2)×1011 cm−3] in pure Ar discharge in the measured region. On the other hand, the Ti atom densities in the Ar–O2 discharge at a total pressure of 0.35 Pa were (0.2–2.9)×109 cm−3, while those were (0.1–1.0)×1010 cm−3 in the pure Ar discharge at 0.35 Pa. Radial profiles of the Ti atom density with a peak structure in Ar–O2 and pure Ar were interpreted based on the plasma parameters and self-bias voltage.

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Nakamura, T., & Okimura, K. (2002). Titanium atom densities in reactive rf magnetron sputtering for TiO2 deposition. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 20(1), 1–6. https://doi.org/10.1116/1.1417539

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