A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs

Abstract

In this work, a new parameter is defined to describe the charge transport regime and to understand the physics behind the operation of Ni/HfO2/Si-n+-based RRAMs. An extraction process of the parameter from experimental reset I-V curves is proposed. The new parameter allows to know the relative importance of the two main transport mechanisms involved in the charge conduction in the low resistance state of the device: a tunneling current through a potential barrier and an ohmic component. A complete simulation study on this issue is provided. Furthermore, the reset voltage can be estimated using this new parameter.