Abstract
A new technique to form empty spaces in silicon substrates is presented. The empty space with various shapes, such as plate as well as sphere and pipe, could be formed under the surface of the silicon substrate.
Cite
CITATION STYLE
APA
Sato, T., Aoki, N., Mizushima, I., & Tsunashima, Y. (1999). New substrate engineering for the formation of Empty Space in Silicon (ESS) induced by silicon surface migration. In Technical Digest - International Electron Devices Meeting (pp. 517–520). IEEE. https://doi.org/10.1541/ieejeiss1987.121.3_524
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