Abstract
The growth mechanisms of three-dimensionally (3D) faceted InGaN quantum wells (QWs) on (1 122) GaN substrates are discussed. The structure is composed of (1122), {1101}, and {1100} planes, and the cross sectional shape is similar to that of 3D QWs on (0001). However, the 3D QWs on (1122) and (0001) show quite different inter-facet variation of In compositions. To clarify this observation, the local thicknesses of constituent InN and GaN on the 3D GaN are fitted with a formula derived from the diffusion equation. It is suggested that the difference in the In incorporation efficiency of each crystallographic plane strongly affects the surface In adatom migration.
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Matsuda, Y., Funato, M., & Kawakami, Y. (2018). Growth mechanism of polar-plane-free faceted InGaN quantum wells. In IEICE Transactions on Electronics (Vol. E101C, pp. 532–536). Institute of Electronics, Information and Communication, Engineers, IEICE. https://doi.org/10.1587/transele.E101.C.532
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