Abstract
Radiative recombination processes in CuInSe2 (CIS) single crystals grown by the vertical Bridgman technique were studied using photoluminescence (PL) and reflectance (RF) spec-troscopies at temperatures from 4.2 to 60 K, and excitation intensity from 0.6 to 30 W/cm2. Study of the quenching parameters of the A and B free- and first three bound-excitons (M1, M2 and M3) in high-quality CuInSe2 single crystal leads to estimates for the binding energy of the A (7.7 meV) and B (7.9 meV) free excitons as well as dissociation energies for the M1, M2 and M3 bound-excitons. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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CITATION STYLE
Yakushev, M. V., Martin, R. W., & Mudryi, A. V. (2009). Temperature dependence of excitonic emission in CuInSe2. In Physica Status Solidi (C) Current Topics in Solid State Physics (Vol. 6, pp. 1082–1085). https://doi.org/10.1002/pssc.200881155
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