Recent progress in hetero-epitaxial growth of the single-crystal diamond

Abstract

Single-crystal diamonds have excellent mechanical, thermal, optical, and electrical properties, and heteroepitaxy is a critical method for preparing large-scale single-crystal diamonds. Considering different types of substrates, such as c-BN, Pt, Si, SiC and Ir multilayer substrate used in the CVD process as the mainline and based on the key findings of the main teams at home and abroad, this paper reviews the development course and the latest progress in this field, mainly involving high-density epitaxial diamond nucleation processes and mechanisms, such as bias-enhanced nucleation and high-temperature annealing after seed treatment, grain boundary annihilation and texture growth processes based on step-flow and the disclination formation mechanism, epitaxial lateral overgrowth and off-axis growth for reducing dislocation. Finally, the current status is summarized and future development is proposed.