121.6 nm radiation source for advanced lithography

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Abstract

A study was performed to demonstrate a DBD-based VUV source that emits strong radiation at 121.6 nm. Using high-pressure neon with a small admixture of hydrogen, an intense and nearly monochromatic source at the Lyman-α line was built with FWHM less than 0.03 nm. The emission spectrum, optical power, efficiency, beam profile, and stability were studied. As a result, it was possible to achieve high power, spectrally narrow and stable 121.6 nm sources from a compact lamp for advanced lithography and other applications.

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Yan, J., El-Dakrouri, A., Laroussi, M., & Gupta, M. C. (2002). 121.6 nm radiation source for advanced lithography. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(6), 2574–2577. https://doi.org/10.1116/1.1515302

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