Diamond-like carbon film deposition using DC Ion source with cold hollow cathode

Abstract

Carbon diamond-like thin films on a silicon substrate were deposited by direct reactive ion beam method with an ion source based on Penning direct-current discharge system with cold hollow cathode. Deposition was performed under various conditions. The pressure (12-200 mPa) and the plasma-forming gas composition consisting of different organic compounds and hydrogen (C CH Si(CHl H, the voltage of accelerating gap in the range 0.5-5 kV, and the substrate temperature in the range 20-850°C were varied. Synthesized films were researched using nanoindentation, Raman, and FTIR spectroscopy methods. Analysis of the experimental results was made in accordance with a developed model describing processes of growth of the amorphous and crystalline carbon materials. © 2014 E. F. Shevchenko et al.