Effects of rapid thermal annealing on two-dimensional delocalized electronic states of the epitaxial N δ-doped layer in GaAs

Abstract

We have conducted rapid thermal annealing (RTA) for improving the two-dimensional (2D) arrangement of electronic states in the epitaxial nitrogen (N) δ-doped layer in GaAs. RTA rearranged the N-pair configurations in the GaAs (001) plane and reduced the number of non-radiative recombination centers. Furthermore, a Landau shift, representing the 2D delocalized electronic states in the (001) plane, was observed at around zero magnetic field intensity in the Faraday configuration.