Abstract
The 1.8 eV luminescence band in GaN grown by molecular beam epitaxy is studied by photo-luminescence (PL) and magnetic resonance. Optically detected magnetic resonance (ODMR) shows that deep centres with g = 1.98 and g = 2.01 are involved in the recombination. The results of the PL experiments indicate that the 1.8 eV recombination can be further fed by shallow centres like shallow donors or excitons.
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CITATION STYLE
Hofmann, D. M., Meyer, B. K., Alves, H., Leiter, F., Burkhard, W., Romanov, N., … Weber, E. R. (2000). Red (1.8 eV) luminescence in epitaxially grown GaN. Physica Status Solidi (A) Applied Research, 180(1), 261–265. https://doi.org/10.1002/1521-396X(200007)180:1<261::AID-PSSA261>3.0.CO;2-2
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