Abstract
A selective chemical vapor deposition process of a ruthenium (Ru) metal capping layer was investigated for Cu interconnects in ultralarge scale integrated circuits. X-ray fluorescence spectroscopy determined the Ru deposition selectivity as a function of the deposition temperature and substrate materials. The feasibility of the selective Ru metal capping layer in the Cu interconnects for nanoelectronic applications was checked via a comprehensive evaluation including both electrical and reliability. © 2010 The Electrochemical Society.
Cite
CITATION STYLE
Yang, C. C., McFeely, F. R., Wang, P. C., Chanda, K., & Edelstein, D. C. (2010). Selective chemical vapor deposition-grown Ru for Cu interconnect capping applications. Electrochemical and Solid-State Letters, 13(5). https://doi.org/10.1149/1.3339450
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
