Improved sensitivity of P3HT-based photo-transistors blended with perovskite nanocrystals

Abstract

Phototransistors based on MAPbI3 perovskite nanocrystals (NCs) blended into P3HT were fabricated with different NCs:P3HT weight ratios. The high absorption coefficient and unique optical properties of the perovskite nanocrystals in the blended devices induce a faster response time and a more stable photoresponse, as compared with pure P3HT phototransistors. In addition, the ILIGHT/IDARK ratio of the optimized device with a 2:1 wt ratio of MAPbI3 NCs to P3HT reaches 123, which is 63% higher than in pure P3HT phototransistors. These phototransistors may find application as tunable photosensors, due to their ease of fabrication and sensitivity.