Temperature effects should be well considered when designing flash-based memory sys-tems, because they are a fundamental factor that affect both the performance and the reliability of NAND flash memories. In this work, aiming to comprehensively understanding the temperature effects on 3D NAND flash memory, triple-level-cell (TLC) mode charge-trap (CT) 3D NAND flash memory chips were characterized systematically in a wide temperature range (−30~70◦ C), by focusing on the raw bit error rate (RBER) degradation during program/erase (P/E) cycling (en-durance) and frequent reading (read disturb). It was observed that (1) the program time showed strong dependences on the temperature and P/E cycles, which could be well fitted by the proposed temperature-dependent cycling program time (TCPT) model; (2) RBER could be suppressed at higher temperatures, while its degradation weakly depended on the temperature, indicating that high-temperature operations would not accelerate the memory cells’ degradation; (3) read disturbs were much more serious at low temperatures, while it helped to recover a part of RBER at high temperatures.
CITATION STYLE
Chen, F., Chen, B., Lin, H., Kong, Y., Liu, X., Zhan, X., & Chen, J. (2021). Temperature impacts on endurance and read disturbs in charge-trap 3d nand flash memories. Micromachines, 12(10). https://doi.org/10.3390/mi12101152
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