The statistical fracture stress distribution of silicon wafer's was obtained by biaxial plate bending tests in combination with finite element calculations. For the correct interpretation of these tests it is important that the finite element calculations imply wafer thickness and elastic properties of the multicrystalline silicon wafer, otherwise the resulting stresses will be estimated to high. The Weibull distribution of fracture stresses yields different parameters for each test series of silicon, depending on the surface preparation and wafer manufacturing condition.
CITATION STYLE
Funke, C., Kullig, E., Kuna, M., & Möller, H. J. (2004). Biaxial fracture test of silicon wafers. Advanced Engineering Materials, 6(7), 594–598. https://doi.org/10.1002/adem.200400406
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