Maskless selective growth method for p-n junction applications on (001)-oriented diamond

Abstract

A maskless selective growth method by chemical vapor deposition (CVD) is a promising technique for fabricating various types of p-n junction devices on diamond semiconductors, instead of the impurity doping by ion-implantation technique. We control diamond growth and impurity doping using patterned surface morphologies of (001)-oriented diamond, which results in a selective growth along the 〈111〉 or 〈110〉 direction. In the case of phosphorus doping, the diamond with selective 〈111〉 growth shows the n-type conducting property, whereas that with selective 〈110〉 growth shows the insulating property owing to the coincorporation of hydrogen. Such strong orientational properties are peculiar in CVD phosphorus doping. The detailed procedures of this selective growth method and the electrical properties of fabricated vertical and lateral p-n junction diodes are described in this article. © 2012 The Japan Society of Applied Physics.