Thick film hydrogen silsesquioxane planarization for passive component technology associated with electronic-photonic integrated circuits

Abstract

Migrating electronic-photonic integrated circuits (EPICs) to higher data rates requires efficient electrical interfaces. This can be achieved with microwave technologies such as coplanar and microstrip transmission lines, but these can be difficult to apply in EPICs because of the complexity of the fabrication processes associated with monolithic integration. In this work, the authors report a novel method for planarizing a thick, low-κ film based on multiple-spins of layers of hydrogen silsesquioxane without a need for thermal curing. Films of total thicknesses of 5 and 6μm were planarized on a heavily doped InP substrate and used to realize coplanar waveguide transmission lines. The film shape is defined as an integral part of the fabrication process without any need for etching. A coplanar waveguide with a characteristic impedance of between 48 and 56Ω over the frequency range 10 MHz–67 GHz was demonstrated.