Abstract
The electrical conductivity of Sr1-xLaxTiO3 ceramics (x≤0.4) and single crystals (x≤0.1) was investigated in the temperature range between 19 and 1673 K. The mobility was calculated from the carrier concentration, n, which was determined by Hall measurements as well as by a chemical Ti3+ titration. The mobility of the single crystals agrees well with a model originally developed for undoped strontium titanate. At low T and high n scattering by ionized donor centers predominates. Above room-temperature phonon scattering becomes predominant. Sr1-xLaxTiO3 ceramics follow the same model, but only if they had been previously reduced in water-free and oxygen-free hydrogen atmospheres. The behavior during the reducing and cooling process can be explained by a defect chemical model, using a set of constants developed in a former work. However, reduced in water saturated hydrogen the conductivity at low T decreases by decades compared to single-crystal data and cannot be explained anymore by the above-mentioned models. In conjunction with impedance spectroscopy experiments it was found, that in this case the electrical behavior of the ceramics is completely governed by grain-boundary phenomena. These high-ohmic grain boundaries may be depletion layers, which are formed or annihilated depending on the conditions of the preceding high-temperature process. © 1996 American Institute of Physics.
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CITATION STYLE
Moos, R., & Härdtl, K. H. (1996). Electronic transport properties of Sr1-xLaxTiO3 ceramics. Journal of Applied Physics, 80(1), 393–400. https://doi.org/10.1063/1.362796
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