Abstract
400 keV Yb+ and 300 keV Er+ were implanted into potassium titanyl phosphate (KTiOPO4 or KTP) with doses of 3×1015 and 1×1015 ions/cm2, respectively. The samples were annealed in the temperature range 600 to 800°C in Ar ambient. The diffusion behaviors of implanted Yb+ and Er+ in KTiOPO4 were investigated by Rutherford backscattering of 2.0 MeV He ions. The results show that no obvious diffusion of Yb+ and Er+ in KTiOPO4 is detected at 600°C annealing, but there are three and two peaks of implanted rare-earth ion distribution after 800°C annealing for the case of Yb+ and Er+, respectively. An explanation of these phenomena is suggested.
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CITATION STYLE
Wang, K. M., Ding, P. J., Wang, W., Lanford, W. A., Li, Y., Li, J. S., & Liu, Y. G. (1994). Abnormal diffusion behavior of Yb+ and Er+ implanted in KTiOPO4. Applied Physics Letters, 64(23), 3101–3103. https://doi.org/10.1063/1.111360
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