Abstract
In this paper we present a CMOS image sensor design with a better sensitivity to low light intensity. This feature is achieved through a multi-resolution analog-to-digital converter (ADC). By doing so, the opto-electrical characteristic of a sensor cell can be finely tuned. A costeffective architecture for realizing the required ADC is also proposed. This architecture leads to a faster conversion time as well as a smaller area. A simulation environment with post-layout accuracy is incorporated to demonstrate the advantages. It shows that a number of images can be captured more clearly than a traditional sensor.
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CITATION STYLE
Chen, S. F., Juang, Y. J., Huang, S. Y., & King, Y. C. (2003). Logarithmic CMOS image sensor through multi-resolution analog-to-digital conversion. In International Symposium on VLSI Technology, Systems, and Applications, Proceedings (Vol. 2003-January, pp. 227–230). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/VTSA.2003.1252594
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