Correction to Breakdown of High-Performance Monolayer MoS 2 Transistors

Abstract

Two-dimensional (2D) materials such as monolayer molybdenum disulfide (MoS(2)) are extremely interesting for integration in nanoelectronic devices where they represent the ultimate limit of miniaturization in the vertical direction. Thanks to the presence of a band gap and subnanometer thickness, monolayer MoS(2) can be used for the fabrication of transistors exhibiting extremely high on/off ratios and very low power dissipation. Here, we report on the development of 2D MoS(2) transistors with improved performance due to enhanced electrostatic control. Our devices show currents in the 100 μA/μm range and transconductance exceeding 20 μS/μm as well as current saturation. We also record electrical breakdown of our devices and find that MoS(2) can support very high current densities, exceeding the current-carrying capacity of copper by a factor of 50. Our results push the performance limit of MoS(2) and open the way to their use in low-power and low-cost analog and radio frequency circuits.