Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching

Abstract

With this work we introduce a novel memristor in a lateral geometry whose resistive switching behaviour unifies the capabilities of bipolar switching with decelerated diffusive switching showing a biologically plausible short-term memory. A new fabrication route is presented for achieving lateral nano-scaled distances by depositing a sparse network of carbon nanotubes (CNTs) via spin-coating of a custom-made CNT dispersion. Electrochemical metallization-type (ECM) resistive switching is obtained by implanting AgAu nanoparticles with a Haberland-type gas aggregation cluster source into the nanogaps between the CNTs and shows a hybrid behaviour of both diffusive and bipolar switching. The resistance state resets to a high resistive state (HRS) either if the voltage is removed with a retention time in the second- to sub-minute scale (diffusive) or by applying a reverse voltage (bipolar). Furthermore, the retention time is positively correlated to the duration of the Set voltage pulse. The potential for low-voltage operation makes this approach a promising candidate for short-term memory applications in neuromorphic circuits. In addition, the lateral fabrication approach opens the pathway towards integrating sensor-functionality and offers a general starting point for the scalable fabrication of nanoscaled devices.