Double Gate MOSFETs: Assessment with Single Gate MOSFETs with Channel Material Configuration, its Structure Orientation and Future Applications

Abstract

In last 3 decades or so as we have scale down the MOSFETs with single-gate to nanometer region in order to maintain the performance level high but single gate MOSFETs still continue to suffers from the interface coupling, channel orientation, channel mobility, leakage current, switching delay and latch up. Further, the additional parameters such as short channel effects (DIBL, GIDL), body effect, hot electron effect, punch through effect, surface scattering, impact ionization, subthreshold swing and volume inversion has shown result inform of increase in leakage current, decrease of inversion charge and decrease in the drive current since double-gate MOSFET came into existence, which relies on the exploration of novel higher mobility channel materials which might perform even better than current existing single gate MOSFETs. This paper compares double-gate MOSFET configuration and single-gate MOSFET configuration using different performance parameters and channel material configuration and additionally assessed different channel materials along with its structure orientation and the future applications.