Impact of Negative Capacitance Junctionless Nanowire (NCJLNW) MOSFET on Ring Oscillator Design and Analysis

Abstract

This work presents the analysis of NCJLNW for low power analog/RF applications; this device shows reduced power consumption, reduced SCEs, smaller leakage and higher Ion/Ioff ratio. The results indicate that the proposed device improves the intrinsic gain, cut-off frequency, transconductance and reduces DIBL. The analysis of band-energy, surface-potential and electric-field has also shown promising results. Ring oscillator has been designed using this device; the analysis of the oscillator presents lower voltage of operation resulting into reduced power consumption, and high noise immunity. The frequency of oscillation is found to be higher at 172.1 GHz at a channel length of 20 nm.