Microwave simulation on the performance of high power GaN/AlGaN heterostructure field effect transistors

Abstract

We present the results of the simulation of dc and microwave performance of a GaN/AlGaN heterostructure field effect transistors and compare the results with recent record-breaking experimental data from Cree Research, Inc. Our simulation results are in good agreement with the data on the small signal transistor performance. The calculated maximum stable power gain decreases with frequency with a 3 dB per octave slope in agreement with experimental results. The simulated values of the saturation power are somewhat less than experimentally measured values. This difference might be caused by self-heating, which is smaller at microwave frequencies than at dc.