Charge carrier separation induced by intrinsic surface strain in pristine ZnO nanowires

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Abstract

We predict by first-principles calculations a spontaneous charge carrier separation mechanism in pristine [0001]-oriented ZnO nanowires. We find that the shrinking strain induced by surface reconstruction causes electrons and holes to separate and move toward the core and surface region, respectively. Such separation can be enhanced by axially applied tensile strain as a result of the enhancement of surface strain induced by the Poisson effect, and be suppressed by compressive axial strain. Similar carrier separations are found in IIB-sulfides. This intrinsic charge separation and tensile strain induced enhancement are expected to shed light on solar cell designs. © 2010 American Institute of Physics.

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Kou, L., Li, C., Zhang, Z. Y., Chen, C., & Guo, W. (2010). Charge carrier separation induced by intrinsic surface strain in pristine ZnO nanowires. Applied Physics Letters, 97(5). https://doi.org/10.1063/1.3467262

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